NTD6415ANL, NVD6415ANL
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
V GS = 0 V, I D = 250 m A, T J = ? 40 ° C
100
92
115
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 100 V
T J = 25 ° C
T J = 125 ° C
1.0
100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
4.8
2.0
V
mV/ ° C
Drain ? to ? Source On ? Resistance
R DS(on)
V GS = 4.5 V, I D = 10 A
44
56
m W
V GS = 10 V, I D = 10 A
43
52
Forward Transconductance
g FS
V DS = 5.0 V, I D = 10 A
24
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
1024
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz, V DS = 25 V
156
70
Total Gate Charge
Q G(TOT)
20
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 80 V, I D = 23 A
1.1
3.1
14
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 80 V, I D = 23 A
35
nC
SWITCHING CHARACTERISTICS (Not e 3)
Turn ? On Delay Time
t d(on)
11
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DD = 80 V,
I D = 23 A, R G = 6.1 W
91
40
71
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 23 A
T J = 25 ° C
T J = 125 ° C
0.87
0.74
1.2
V
Reverse Recovery Time
t RR
64
ns
Charge Time
Discharge Time
T a
T b
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 23 A
40
24
Reverse Recovery Charge
Q RR
152
nC
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
NTD6415ANLT4G
NVD6415ANLT4G
Device
Package
DPAK
(Pb ? Free)
DPAK
(Pb ? Free)
Shipping ?
2500 / Tape & Reel
2500 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
2
相关PDF资料
NVF2955PT1G MOSFET P CH 60V 1.7A SOT223
NVF5P03T3G MOSFET P-CH 30V 3.7A SOT-223
NVMFD5877NLT1G MOSFET N-CH 60V 17A 8SOIC
NVMFS4841NT1G MOSFET N-CH 30V 89A SO-8FL
NVMFS5844NLT1G MOSFET N-CH 60V 11.2S SO-8FL
NVR1P02T1G MOSFET N-CH 20V 1A SOT-23-3
NVTFS4823NTAG MSOFET N-CH 30V 30A 8WDFN
NVTFS4824NTAG MOSFET N-CH 30V 18.2A 8WDFN
相关代理商/技术参数
NVD6415ANT4G 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD6416ANLT4G 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD6416ANT4G 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD6820NL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 90 V, 17 m, 50 A, Single N.Channel
NVD6820NLT4G 功能描述:MOSFET NFET DPAK 90V 50A 17MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD6824NL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 100 V, 20 m, 41 A, Single N.Channel
NVD6824NLT4G 功能描述:MOSFET NFET DPAK 100V 40A 24MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD6828NL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 90 V, 20 m, 41 A, Single N.Channel